Find the latest NOW Inc. (DNOW) stock quote, history, news and other vital information to help you with your stock trading and investing. The field effect transistor, FET, is a three terminal device which provides voltage gain. Having a high input impedance the electric field in the vicinity of the input terminal called the gate modifies the current flowing in what is called the channel between terminals called the source and drain. We would like to show you a description here but the site won’t allow us.
1822
Born to Afanasy Shenshin and Charlotta Foeth, who left her husband Johann Foeth and married the Russian nobleman. Because their marriage was not official until 1822, Fet was not able to assume the name Shenshin, was denied the rights of nobility and was forced to become a raznochinets, a fact that rankled Fet his whole life
1838-44
After studying in a boarding school in Estonia, studies philology at Moscow University where he writes his first poems
1845
Enters military service in an attempt to reclaim his noble rights
1840
Publishes his first collection, The Lyrical Pantheon
1842-3
Eighty-five poems appear in Notes of the Fatherland and Muscovite
1850
Publishes his second collection, including love lyric 'Whisper, timid breathing' which contained much of Fet's lifelong stylistic tropes: verse composed almost entirely of nouns and adjectives, limited and unconventional rhymes, natural, melodic rhythm, and an exceptional sense of mood - these qualities made him very popular among the later Symbolists like Bely, Ivanov, and Annensky
1853
Transferred to the guards, and given the opportunity to associate with writers in Petersburg, namely Turgenev
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1856
Publishes his third collection, with an introduction by Turgenev; Writes 'To Death' his first poem to make death seem attractive, the verse functions as a death wish (he writes another poem with this title in 1884)
1857
Marries the sister of Critic V.P. Botkin; writes 'Upon a Haystack on a Southern Night' (Leo Tolstoy's favorite poem)
1859
Writes on Tyutchev in Russian Word, an essay that spells out Fet's philosophy on art, that is, that the artist's duty is only to serve the muse and the notion of beauty - ideology and social concerns were of no concern to him. This attitude brought the liberal critics Chernyshevsky, Dobrolyubov, Pisarev down upon him
1860
Settles on a country estate to live life of squire
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1864
Writes 'Tortured by life and the perfidy of hope,' which contains the notion that all human experience is part of a dream; writes 'Life flew by withut leaving a clear trace,' which echoes Verlaine and contains the fallen leaf, a recurring Fet image
1873
Tsar Aleksandr II rectifies the situation of Fet's nobility and he is given the rights and privileges of a hereditary nobleman
1870's
Begins friendship with Tolstoy, who shared Fet's distaste with the liberal critics; later introduces Tolstoy to the works of Schopenhauer
1877
Buys a larger estate where he winters
1878
Writes 'Death' another of his death wish poems
1881
Translates Schopenhauer into Russian
1889
Awarded the court title of Kammerherr, which went further in righting the wrongs of having his title denied him
1892
Dies in early winter
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The Saturation Region of a FET transistor is the region where the drain current, ID, flowing from the drain to the source of the FET transistor, is the highest for the gate-source voltage, VGS, that is supplied. Screen grab apple mac.
This is why it is referred to as the saturation region, because the drain current output is at saturation, or maximum, output for the given voltage.
When you view the above characteristics curve for the above FET transistor, which in this case is a N-Channel JFET, the largest drain current ID occurs when the gate-source voltage, VGS, supplied is 0V. On the chart above, this would producethe current, called IDSS, and it's approximately equal to 12mA. The saturaton current when VGS= -1V is approximately 8mA. The saturation current when VGS= -2V is approximately 6mA. The saturation current when VGS= -3V is approximately 4mA. The saturation current when VGS= -4V is approximately 2mA.
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In the saturation region, the FET transistor is strongly influenced by gate-source voltage, VGS, but hardly at all by the drain-source voltage, VDS.
The saturation region makes up the active region of the FET, where the transistor is in the On state.
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